166. As VGS becomes ________ negative, the slope of each curve in the characteristics becomes ________ horizontal corresponding with an increasing resistance level.
(a) less, more
(b) more, less
(c) more, more
(d) None of the above
167. The transfer curve can be obtained by ________.
(a) using Shockley’s equation
(b) using both Shockley’s equation and by output characteristics
(c) characteristics
(d) None of the above
168. The primary difference between the construction of a MOSFET and an FET is the ________.
(a) construction of the gate connection
(b) low input impedance
(c) threshold voltage
(d) None of the above
169. In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the ________ region with the region between cutoff and the saturation level of ID referred to as the ________ region.
(a) depletion, enhancement
(b) enhancement, enhancement
(c) enhancement, depletion
(d) None of the above
170. The FET resistance in the ohmic region is ________ at VP and ________ at the origin.
(a) smallest, largest
(b) largest, smallest
(c) larger, smaller
(d) smaller, larger
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5555555555169. In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the ________ region with the region between cutoff and the saturation level of ID referred to as the ________ region. (a) depletion, enhancement (b) enhancement, enhancement (c) enhancement, depletion (d) None of the above- 5555555555135. Referring to the following transfer curve, determine the level of VGS when the drain current is 20 mA. (a) 1.66 V (b) –1.66 V (c) 0.66 V (d) –0.66 V
- 5555555555155. Which of the following represent(s) the cutoff region for an FET? (a) ID = 0 mA (b) VGS = VP (c) IG = 0 (d) All of the above
- 5555555555160. The level of VGS that results in ID = 0 mA is defined by VGS = ________. (a) VGS(off) (b) VP (c) VDS (d) None of the above
- MOSFET » Exercise - 1 1. For a MOSFET, the gate current : (a) Is dependent on drain current (b) Is negligibly small (c) Is independent of gate voltage (d) Increases with increase in gate voltage 2. For an n-channel enhancement mode MOSFET, the drain current : (a) Decreases with increases in drain voltage (b) Decreases with decrease in drain voltage (c) Increases with increases in gate voltage (d) Increases with decrease in gate voltage 3. Input impedance of MOSFET is : (a) Less than BJT but more than FET (b) More than BJT but less than FET (c) More than BJT and FET (d) Less than BJT and FET 4. Electrostatic discharge may kill : (a) BJT (b) FET (c) UJT (d) MOSFET 5. Consider the statements Statement I : N-channel MOS transistors are faster than p-channel MOS transistor. Statement II : Surface field effect is the operational principle of MOSFETs. Which of the above is/are a valid one ? (a) Statement I only (b) Statement II only (c) Both statements I and II (d) Either statement I or II 6. The gate voltage required for the conduction of an n-channel enhanced mode MOSFET having a threshold voltage of 2V is : (a) 0 V (b)…