MOSFET – Exercise – 1

1. For a MOSFET, the gate current :

(a)  Is dependent on drain current
(b)  Is negligibly small
(c)  Is independent of gate voltage
(d)  Increases with increase in gate voltage

Answer
Answer : (b)
Explanation
No answer description available for this question. Let us discuss.
2. For an n-channel enhancement mode MOSFET, the drain current :

(a)  Decreases with increases in drain voltage
(b)  Decreases with decrease in drain voltage
(c)  Increases with increases in gate voltage
(d)  Increases with decrease in gate voltage

Answer
Answer : (c)
Explanation
No answer description available for this question. Let us discuss.
3. Input impedance of MOSFET is :

(a)  Less than BJT but more than FET
(b)  More than BJT but less than FET
(c)  More than BJT and FET
(d)  Less than BJT and FET

Answer
Answer : (c)
Explanation
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4. Electrostatic discharge may kill :

(a)  BJT
(b)  FET
(c)  UJT
(d)  MOSFET

Answer
Answer : (d)
Explanation
No answer description available for this question. Let us discuss.
5. Consider the statements
Statement I : N-channel MOS transistors are faster than p-channel MOS transistor.
Statement II : Surface field effect is the operational principle of MOSFETs.
Which of the above is/are a valid one ?

(a)  Statement I only
(b)  Statement II only
(c)  Both statements I and II
(d)  Either statement I or II

Answer
Answer : (c)
Explanation
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6. The gate voltage required for the conduction of an n-channel enhanced mode MOSFET having a threshold voltage of 2V is :

(a)  0 V
(b)  1 V
(c)  2 V
(d)  More than 2 V

Answer
Answer : (d)
Explanation
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7. The main application of the enhancement mode MOSFET is :
(a)  Amplification
(b)  Switching
(c)  Tuning
(d)  Rectification

Answer
Answer : (b)
Explanation
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8. …….. is an excellent device for interfacing digital IC’s to high power loads.

(a)  Depletion mode power MOSFET
(b)  Enhancement mode power MOSFET
(c)  JFET
(d)  Bipolar transistor

Answer
Answer : (a)
Explanation
No answer description available for this question. Let us discuss.
9. VMOS transistor is basically :

(a)  Power transistor
(b)  Three diodes connected parallelly
(c)  JFET
(d)  Enhanced-mode MOSFET

Answer
Answer : (d)
Explanation
No answer description available for this question. Let us discuss.
10. A MOSFET has ……. terminals.

(a)  two
(b)  five
(c)  four
(d)  three

Answer
Answer : (d)
Explanation
No answer description available for this question. Let us discuss.
(a) (b) (c) (d) Answer : () [/su_spoiler]
Explanation
No answer description available for this question. Let us discuss.
12. Which of the following devices has the highest input impedance ?

(a)  JFET
(b)  MOSFET
(c)  crystal diode
(d)  ordinary transistor

Answer
Answer : (b)
Explanation
No answer description available for this question. Let us discuss.
13. A MOSFET uses the electric field of a ……. to control the channel current.

(a)  capacitor
(b)  battery
(c)  generator
(d)  none of the above

Answer
Answer : (a)
Explanation
No answer description available for this question. Let us discuss.
14. The input impedance of a MOSFET is of the order of …………..

(a)  Ω
(b)  a few hundred Ω
(c)  k Ω
(d)  several M Ω

Answer
Answer : (d)
Explanation
No answer description available for this question. Let us discuss.
15. A MOSFET differs from a JFET mainly because ……………

(a)  of power rating
(b)  the MOSFET has two gates
(c)  the JFET has a pn junction
(d)  none of above

Answer
Answer : (c)
Explanation
No answer description available for this question. Let us discuss.
16. A certain D-MOSFET is biased at VGS = 0V. Its data sheet specifies IDSS = 20 mA and VGS (off) = – 5V. The value of the drain current is ……………

(a)  20 mA
(b)  0 mA
(c)  40 mA
(d)  10 mA

Answer
Answer : (a)
Explanation
No answer description available for this question. Let us discuss.
17. An n-channel D-MOSFET with a positive VGS is operating in ……………

(a)  the depletion-mode
(b)  the enhancement-mode
(c)  cut off
(d)  saturation

Answer
Answer : (b)
Explanation
No answer description available for this question. Let us discuss.
18. A certain p-channel E-MOSFET has a VGS (th) = – 2V. If VGS = 0V, the drain current is ………

(a)  0 mA
(b)  ID (on)
(c)  maximum
(d)  IDSS

Answer
Answer : (a)
Explanation
No answer description available for this question. Let us discuss.
19. In a certain common-source D-MOSFET amplifier, Vds = 3.2 V r.m.s. and Vgs = 280 mV r.m.s. The voltage gain is ……………

(a)  1
(b)  11.4
(c)  8.75
(d)  3.2

Answer
Answer : (b)
Explanation
No answer description available for this question. Let us discuss.
20. The main factor which differentiates a DEMOSFET from an E-only MOSFET is the absence of :

(a)  P-N junctions
(b)  Insulated gate
(c)  Electrons
(d)  Channel

Answer
Answer : (d)
Explanation
No answer description available for this question. Let us discuss.
21. ………… is the best electronic device for fast switching .

(a)  MOSFET
(b)  JFET
(c)  BJT
(d)  Triode

Answer
Answer : (a)
Explanation
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22. Number of Terminals in a MOSFET are :

(a)  Two
(b)  Three
(c)  Four
(d)  Five

Answer
Answer : (b)
Explanation
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