26. Which of the following represents the voltage level of VGS in a self-bias configuration?
(a) VG
(b) VGS(off)
(c) VS
(d) VP
27. The ratio of current ID to IDSS is equal to ________ for a fixed-bias configuration.
(a) 0
(b) 0.25
(c) 0.5
(d) 1
28. In a fixed-bias configuration, the voltage level of VGS is equal to ________.
(a) VS
(b) VG
(c) VGS(off)
(d) VP
29. Determine the quiescent values of ID and VGS.
(a) 1.2 mA, –1.8 V
(b) 1.5 mA, –1.5 V
(c) 2.0 mA, –1.2 V
(d) 3.0 mA, –0.8 V
30. Calculate VDSQ.
(a) 1.0 V
(b) 1.50 V
(c) 2.56 V
(d) 3.58 V
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FET » Exercise - 3 101. Nota 102. Nota 103. Nota 104. A JFET data sheet specifies VGS(off) = –10 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V. (a) 2 mA (b) 1.4 mA (c) 4.8 mA (d) 3.92 mA 105. A JFET data sheet specifies VGS(off) = –6 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V. (a) 2 mA (b) 4 mA (c) 8 mA (d) none of the above 106. The JFET is always operated with the gate-source pn junction ________ -biased. (a) forward (b) (c) (d) 107. If VD is less than expected (normal) for a self-biased JFET circuit, then it could be caused by a(n) (a) open RG. (b) open gate lead. (c) FET internally open at gate. (d) all of the above 108. In a self-biased JFET circuit, if VD = VDD then ID = ________. (a) 0 (b) cannot be determined from information above Answ (c) (d) 109. The resistance of a JFET biased in the ohmic region is controlled by (a) VD. (b) VGS. (c) VS. (d) VDS. 110. What type(s) of gate-to-source voltage(s) can a depletion MOSFET…
DC Biasing FETs » Exercise - 2 51. In an enhancement-type MOSFET, the drain current is zero for levels of VGS less than the ________ level. (a) VGS(Th) (b) VGS(off) (c) VP (d) VDD 52. The slope of the dc load line in a voltage-divider is controlled by ________. (a) R1 (b) R2 (c) RS (d) All of the above 53. In a depletion-type MOSFET, the transfer characteristic rises ________ as VGS becomes more positive. (a) less rapidly (b) more rapidly (c) the same (d) None of the above