21. For what value of RS can the depletion-type MOSFETs operate in enhancement mode?
(a) 2.4 k
(b) 5 k
(c) 6.2 k
(d) None of the above
22. Which of the following describe(s) the difference(s) between JFETs and depletion-type MOSFETs?
(a) VGS can be positive or negative for the depletion-type.
(b) ID can exceed IDSS for the depletion-type.
(c) The depletion-type can operate in the enhancement mode.
(d) All of the above
23. Which of the following is a false statement regarding the dc load line when comparing self-bias and voltage-divider configurations?
(a) Both are linear lines.
(b) Both cross the origin.
(c) Both intersect the transfer characteristics.
(d) Both are obtained by writing Kirchhoff’s voltage law (KVL) at the input side loop.
24. For what value of R2 is VGSQ equal to 1 V?
(a) 10 M
(b) 100 M
(c) 110 M
(d) 220 M
25. What is the new value of RD when there is 7 V across VDS?
(a) 3 k
(b) 3.3 k
(c) 4 k
(d) 5 k
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555555555528. In a fixed-bias configuration, the voltage level of VGS is equal to ________. (a) VS (b) VG (c) VGS(off) (d) VP- 555555555537. In a universal JFET bias curve, the horizontal axis is ________. (a) VDS (b) ID / IDSS (c) the normalized level (d) VGS
- FET » Exercise - 3 101. Nota 102. Nota 103. Nota 104. A JFET data sheet specifies VGS(off) = –10 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V. (a) 2 mA (b) 1.4 mA (c) 4.8 mA (d) 3.92 mA 105. A JFET data sheet specifies VGS(off) = –6 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V. (a) 2 mA (b) 4 mA (c) 8 mA (d) none of the above 106. The JFET is always operated with the gate-source pn junction ________ -biased. (a) forward (b) (c) (d) 107. If VD is less than expected (normal) for a self-biased JFET circuit, then it could be caused by a(n) (a) open RG. (b) open gate lead. (c) FET internally open at gate. (d) all of the above 108. In a self-biased JFET circuit, if VD = VDD then ID = ________. (a) 0 (b) cannot be determined from information above Answ (c) (d) 109. The resistance of a JFET biased in the ohmic region is controlled by (a) VD. (b) VGS. (c) VS. (d) VDS. 110. What type(s) of gate-to-source voltage(s) can a depletion MOSFET…
- 5555555555161. The level of ________ that results in the significant increase in drain current in enhancement-type MOSFETs is called threshold voltage VT. (a) VDD (b) VDS (c) VGS (d) VDG
- DC Biasing FETs » Exercise - 2 51. In an enhancement-type MOSFET, the drain current is zero for levels of VGS less than the ________ level. (a) VGS(Th) (b) VGS(off) (c) VP (d) VDD 52. The slope of the dc load line in a voltage-divider is controlled by ________. (a) R1 (b) R2 (c) RS (d) All of the above 53. In a depletion-type MOSFET, the transfer characteristic rises ________ as VGS becomes more positive. (a) less rapidly (b) more rapidly (c) the same (d) None of the above