16. Calculate VCE.
(a) 0 V
(b) 2 V
(c) 3 V
(d) 5.34 V
17. Calculate VDS.
(a) 0 V
(b) 6 V
(c) 16 V
(d) 11 V
18. Calculate VD.
(a) 23.0 V
(b) 17.0 V
(c) 4.6 V
(d) 12.4 V
19. Calculate the value of VDSQ.
(a) 0 V
(b) 20 V
(c) 30 V
(d) 40 V
20. What are the voltages across RD and RS?
(a) 0 V, 0 V
(b) 5 V, 5 V
(c) 10 V, 10 V
(d) 20 V, 20 V
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FET » Exercise - 3 101. Nota 102. Nota 103. Nota 104. A JFET data sheet specifies VGS(off) = –10 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V. (a) 2 mA (b) 1.4 mA (c) 4.8 mA (d) 3.92 mA 105. A JFET data sheet specifies VGS(off) = –6 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V. (a) 2 mA (b) 4 mA (c) 8 mA (d) none of the above 106. The JFET is always operated with the gate-source pn junction ________ -biased. (a) forward (b) (c) (d) 107. If VD is less than expected (normal) for a self-biased JFET circuit, then it could be caused by a(n) (a) open RG. (b) open gate lead. (c) FET internally open at gate. (d) all of the above 108. In a self-biased JFET circuit, if VD = VDD then ID = ________. (a) 0 (b) cannot be determined from information above Answ (c) (d) 109. The resistance of a JFET biased in the ohmic region is controlled by (a) VD. (b) VGS. (c) VS. (d) VDS. 110. What type(s) of gate-to-source voltage(s) can a depletion MOSFET…
DC Biasing FETs » Exercise - 2 51. In an enhancement-type MOSFET, the drain current is zero for levels of VGS less than the ________ level. (a) VGS(Th) (b) VGS(off) (c) VP (d) VDD 52. The slope of the dc load line in a voltage-divider is controlled by ________. (a) R1 (b) R2 (c) RS (d) All of the above 53. In a depletion-type MOSFET, the transfer characteristic rises ________ as VGS becomes more positive. (a) less rapidly (b) more rapidly (c) the same (d) None of the above