DC Biasing FETs » Exercise – 1
1. Calculate the value of VDS.
(a) 0 V
(b) 8 V
(c) 4.75 V
(d) 16 V
2. For the FET, the relationship between the input and output quantities is ________ due to the ________ term in Shockley’s equation.
(a) nonlinear, cubed
(b) linear, proportional
(c)
(d)
3. Given the values of VDQ and IDQ for this circuit, determine the required values of RD and RS.
(a) 2 k, 2 k
(b) 1 k, 5.3 k
(c) 3.2 k, 400
(d) 2.5 k, 5.3 k
4. Determine the value of VDSQ.
(a) 3.5 V
(b) 4.86 V
(c) 7.14 V
(d) 10 V
5. Calculate the value of VDS.
(a) 0 V
(b) 0.35 V
(c) 3.8 V
(d) 33.5 V
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FET » Exercise - 3 101. Nota 102. Nota 103. Nota 104. A JFET data sheet specifies VGS(off) = –10 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V. (a) 2 mA (b) 1.4 mA (c) 4.8 mA (d) 3.92 mA 105. A JFET data sheet specifies VGS(off) = –6 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V. (a) 2 mA (b) 4 mA (c) 8 mA (d) none of the above 106. The JFET is always operated with the gate-source pn junction ________ -biased. (a) forward (b) (c) (d) 107. If VD is less than expected (normal) for a self-biased JFET circuit, then it could be caused by a(n) (a) open RG. (b) open gate lead. (c) FET internally open at gate. (d) all of the above 108. In a self-biased JFET circuit, if VD = VDD then ID = ________. (a) 0 (b) cannot be determined from information above Answ (c) (d) 109. The resistance of a JFET biased in the ohmic region is controlled by (a) VD. (b) VGS. (c) VS. (d) VDS. 110. What type(s) of gate-to-source voltage(s) can a depletion MOSFET…
DC Biasing FETs » Exercise - 2 51. In an enhancement-type MOSFET, the drain current is zero for levels of VGS less than the ________ level. (a) VGS(Th) (b) VGS(off) (c) VP (d) VDD 52. The slope of the dc load line in a voltage-divider is controlled by ________. (a) R1 (b) R2 (c) RS (d) All of the above 53. In a depletion-type MOSFET, the transfer characteristic rises ________ as VGS becomes more positive. (a) less rapidly (b) more rapidly (c) the same (d) None of the above