16. The saturation region is defined by VCE ________ VCEsat.
(a) >
(b) <
(c)
(d)
17. At what region of operation is the base-emitter junction forward biased and the base-collector junction reverse biased?
(a) Saturation
(b) Linear or active
(c) Cutoff
(d) None of the above
18. Which of the following is (are) related to an emitter-follower configuration?
(a) The input and output signals are in phase.
(b) The voltage gain is slightly less than 1.
(c) Output is drawn from the emitter terminal.
(d) All of the above
19. Which of the following is assumed in the approximate analysis of a voltage divider circuit?
(a) IB is essentially zero amperes.
(b) R1 and R2 are considered to be series elements.
(c) RE 10R2
(d) All of the above
20. For what value of does the transistor enter the saturation region?
(a) 20
(b) 50
(c) 75
(d) 116
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BJT » Exercise - 2 51. For a properly biased pnp transistor, let IC = 10 mA and IE = 10.2 mA. What is the level of IB? (a) 0.2 A (b) 200 mA (c) 200 A (d) 20.2 mA 52. Transistors are ________-terminal devices. (a) 2 (b) 3 (c) 4 (d) 5 53. How many carriers participate in the injection process of a unipolar device? (a) 1 (b) 2 (c) 0 (d) 3 54. Which of the following is (are) the terminal(s) of a transistor? (a) Emitter (b) Base (c) Collector (d) All of the above 55. List the types of bipolar junction transistors. (a) ppn, npn (b) pnp, npn (c) npp, ppn (d) nnp, pnp 56. The outer layers of a transistor are ________ the sandwiched layer. (a) much smaller than (b) the same as (c) much larger than (d) None of the above 57. How many individual pnp silicon transistors can be housed in a 14-pin plastic dual-in-line package? (a) 4 (b) 7 (c) 10 (d) 14 58. A transistor can be checked using a(n) ________. (a) curve tracer (b) digital meter (c) ohmmeter (d) Any of the above 59. What does a reading of a large or…- BJT » Exercise - 1 1. A BJT has …… PN junction. (a) 1 (b) 2 (c) 3 (d) 4 2. A BJT has : (a) One PN junction (b) Two PN junctions (c) Three PN junctions (d) Four PN junctions 3. The gate of FET is analogous to the …….. of BJT. (a) Emitter (b) Collector (c) Base (d) None of these 4. A BJT is ......... controlled and the FET is ......... controlled device. (a) Current, Current (b) Voltage, Voltage (c) Voltage, Current (d) Current, Voltage 5. BJT with hfe=200, Ib=10 mA and IC= 4 mA is operating in : (a) Active region (b) Cut-off region (c) Saturation region (d) None of these 6. Which of the following statements is/are correct ? I. The DC load line is steeper than AC load line. II. BJT is a voltage controlled device. (a) Statement I (b) Statement II (c) Both statements I & II (d) Either statement I or II 7. In which mode of BJT operation are both junction reverse biased : (a) active (b) saturation (c) cut-off (d) revers active 8. In which mode of BJT operation are both junction forward biased : (a) active (b) saturation (c) cut-off (d) revers active 9. In a bipolar junction transistor the base region is made very thin so that :…
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