161. The level of ________ that results in the significant increase in drain current in enhancement-type MOSFETs is called threshold voltage VT.
(a) VDD
(b) VDS
(c) VGS
(d) VDG
162. The primary difference between the construction of depletion-type and enhancement-type MOSFETs is ________.
(a) the size of the transistor
(b) the absence of the channel
(c) the reverse bias junction
(d) All of the above
163. The active region of an FET is bounded by ________.
(a) ohmic region
(b) cutoff region
(c) power line
(d) All of the above
164. A(n) ________ can be used to check the condition of an FET.
(a) digital display meter (DDM)
(b) ohmmeter (VOM)
(c) curve tracer
(d) All of the above
165. The region to the right of the pinch-off locus is commonly referred to as the ________ region.
(a) constant-current
(b) saturation
(c) linear amplification
(d) All of the above
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5555555555169. In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the ________ region with the region between cutoff and the saturation level of ID referred to as the ________ region. (a) depletion, enhancement (b) enhancement, enhancement (c) enhancement, depletion (d) None of the above- 5555555555135. Referring to the following transfer curve, determine the level of VGS when the drain current is 20 mA. (a) 1.66 V (b) –1.66 V (c) 0.66 V (d) –0.66 V
- 5555555555155. Which of the following represent(s) the cutoff region for an FET? (a) ID = 0 mA (b) VGS = VP (c) IG = 0 (d) All of the above
- 5555555555160. The level of VGS that results in ID = 0 mA is defined by VGS = ________. (a) VGS(off) (b) VP (c) VDS (d) None of the above
- MOSFET » Exercise - 1 1. For a MOSFET, the gate current : (a) Is dependent on drain current (b) Is negligibly small (c) Is independent of gate voltage (d) Increases with increase in gate voltage 2. For an n-channel enhancement mode MOSFET, the drain current : (a) Decreases with increases in drain voltage (b) Decreases with decrease in drain voltage (c) Increases with increases in gate voltage (d) Increases with decrease in gate voltage 3. Input impedance of MOSFET is : (a) Less than BJT but more than FET (b) More than BJT but less than FET (c) More than BJT and FET (d) Less than BJT and FET 4. Electrostatic discharge may kill : (a) BJT (b) FET (c) UJT (d) MOSFET 5. Consider the statements Statement I : N-channel MOS transistors are faster than p-channel MOS transistor. Statement II : Surface field effect is the operational principle of MOSFETs. Which of the above is/are a valid one ? (a) Statement I only (b) Statement II only (c) Both statements I and II (d) Either statement I or II 6. The gate voltage required for the conduction of an n-channel enhanced mode MOSFET having a threshold voltage of 2V is : (a) 0 V (b)…