156. Referring to this transfer curve. Calculate (using Shockley’s equation) VGS at ID = 4mA.
(a) 2.54 V
(b) –2.54 V
(c) –12 V
(d) Undefined
157. At which of the following condition(s) is the depletion region uniform?
(a) No bias
(b) VDS > 0 V
(c) VDS = VP
(d) None of the above
158. The three terminals of the JFET are the ________, ________, and ________.
(a) gate, collector, emitter
(b) base, collector, emitter
(c) gate, drain, source
(d) gate, drain, emitter
159. The region to the left of the pinch-off locus is referred to as the ________ region.
(a) saturation
(b) cutoff
(c) ohmic
(d) All of the above
160. The level of VGS that results in ID = 0 mA is defined by VGS = ________.
(a) VGS(off)
(b) VP
(c) VDS
(d) None of the above
Related Posts
5555555555169. In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the ________ region with the region between cutoff and the saturation level of ID referred to as the ________ region. (a) depletion, enhancement (b) enhancement, enhancement (c) enhancement, depletion (d) None of the above- 5555555555135. Referring to the following transfer curve, determine the level of VGS when the drain current is 20 mA. (a) 1.66 V (b) –1.66 V (c) 0.66 V (d) –0.66 V
- 5555555555155. Which of the following represent(s) the cutoff region for an FET? (a) ID = 0 mA (b) VGS = VP (c) IG = 0 (d) All of the above
- 5555555555160. The level of VGS that results in ID = 0 mA is defined by VGS = ________. (a) VGS(off) (b) VP (c) VDS (d) None of the above
- MOSFET » Exercise - 1 1. For a MOSFET, the gate current : (a) Is dependent on drain current (b) Is negligibly small (c) Is independent of gate voltage (d) Increases with increase in gate voltage 2. For an n-channel enhancement mode MOSFET, the drain current : (a) Decreases with increases in drain voltage (b) Decreases with decrease in drain voltage (c) Increases with increases in gate voltage (d) Increases with decrease in gate voltage 3. Input impedance of MOSFET is : (a) Less than BJT but more than FET (b) More than BJT but less than FET (c) More than BJT and FET (d) Less than BJT and FET 4. Electrostatic discharge may kill : (a) BJT (b) FET (c) UJT (d) MOSFET 5. Consider the statements Statement I : N-channel MOS transistors are faster than p-channel MOS transistor. Statement II : Surface field effect is the operational principle of MOSFETs. Which of the above is/are a valid one ? (a) Statement I only (b) Statement II only (c) Both statements I and II (d) Either statement I or II 6. The gate voltage required for the conduction of an n-channel enhanced mode MOSFET having a threshold voltage of 2V is : (a) 0 V (b)…