11. As the temperature increases, ________, VBE ________, and ICO ________ in value for every 10ºC.
(a) increases, decreases, doubles
(b) decreases, increases, remains the same
(c) decreases, increases, doubles
(d) increases, increases, triples
12. For the typical transistor amplifier in the active region, VCE is usually about ________ % to ________ % of VCC.
(a) 0, 100
(b) 25, 75
(c) 45, 55
(d) None of the above
13. Which of the following voltages must have a negative level (value) in any npn bias circuit?
(a) VBE
(b) VCE
(c) VBC
(d) None of the above
14. Which of the following currents is nearly equal to each other?
(a) IB and IC
(b) IE and IC
(c) IB and IE
(d) IB, IC, and IE
15. The ratio of which two currents is represented by ?
(a) IC and IE
(b) IC and IB
(c) IE and IB
(d) None of the above
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BJT » Exercise - 2 51. For a properly biased pnp transistor, let IC = 10 mA and IE = 10.2 mA. What is the level of IB? (a) 0.2 A (b) 200 mA (c) 200 A (d) 20.2 mA 52. Transistors are ________-terminal devices. (a) 2 (b) 3 (c) 4 (d) 5 53. How many carriers participate in the injection process of a unipolar device? (a) 1 (b) 2 (c) 0 (d) 3 54. Which of the following is (are) the terminal(s) of a transistor? (a) Emitter (b) Base (c) Collector (d) All of the above 55. List the types of bipolar junction transistors. (a) ppn, npn (b) pnp, npn (c) npp, ppn (d) nnp, pnp 56. The outer layers of a transistor are ________ the sandwiched layer. (a) much smaller than (b) the same as (c) much larger than (d) None of the above 57. How many individual pnp silicon transistors can be housed in a 14-pin plastic dual-in-line package? (a) 4 (b) 7 (c) 10 (d) 14 58. A transistor can be checked using a(n) ________. (a) curve tracer (b) digital meter (c) ohmmeter (d) Any of the above 59. What does a reading of a large or…- BJT » Exercise - 1 1. A BJT has …… PN junction. (a) 1 (b) 2 (c) 3 (d) 4 2. A BJT has : (a) One PN junction (b) Two PN junctions (c) Three PN junctions (d) Four PN junctions 3. The gate of FET is analogous to the …….. of BJT. (a) Emitter (b) Collector (c) Base (d) None of these 4. A BJT is ......... controlled and the FET is ......... controlled device. (a) Current, Current (b) Voltage, Voltage (c) Voltage, Current (d) Current, Voltage 5. BJT with hfe=200, Ib=10 mA and IC= 4 mA is operating in : (a) Active region (b) Cut-off region (c) Saturation region (d) None of these 6. Which of the following statements is/are correct ? I. The DC load line is steeper than AC load line. II. BJT is a voltage controlled device. (a) Statement I (b) Statement II (c) Both statements I & II (d) Either statement I or II 7. In which mode of BJT operation are both junction reverse biased : (a) active (b) saturation (c) cut-off (d) revers active 8. In which mode of BJT operation are both junction forward biased : (a) active (b) saturation (c) cut-off (d) revers active 9. In a bipolar junction transistor the base region is made very thin so that :…
- DC Biasing BJTs » Exercise - 2 51. ________ is less dependent on the transistor beta. (a) Fixed bias (b) Emitter bias (c) Voltage divider (d) Voltage feedback 52. A significant increase in leakage current due to increase in temperature creates ________between IB curves. (a) smaller spacing (b) larger spacing (c) the same space as at lower temperature (d) None of the above 53. In any amplifier employing a transistor, the collector current IC is sensitive to ________. (a) (b) VBE (c) ICO (d) All of the above 54. In a collector feedback bias circuit, the current through the collector resistor is ________ and the collector current is ________. (a) IC, IC (b) IB + IC, IC (c) IB, IC (d) None of the above 55. The ________the stability factor, the ________sensitive the network is to variations in that parameter. (a) higher, more (b) higher, less (c) lower, more (d) None of the above
- 555555555545. The saturation current of a transistor used in a fixed-bias circuit is ________ its value used in an emitter-stabilized or voltage-divider bias circuit for the same values of RC. (a) more than (b) the same as (c) less than (d) None of the above
- 555555555538. For a transistor operating in the saturation region, the collector current IC is at its ________ and the collector-emitter voltage VCE is to the ________. (a) minimum, left of the line (b) minimum, right of the line (c) maximum, left of the line (d) maximum, right of the line