5555555555
40. Determine the nominal voltage for the Zener diode at a temperature of 120° C if the nominal voltage is 5.1 volts at 25° C and the temperature coefficient is 0.05%/° C.
(a) 4.6 V
(b) 4.86 V
(c) 5.1 V
(d) 5.34 V
Subject Name : Electronics Engineering |
Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT |
Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant |
Electronics & Communication Engineering Books
|
GATE 2023 Total Info | ENGG DIPLOMA | UGC NET Total Info |
IES 2023 Total Info | PSUs 2022 Total Info | CSIR UGC NET Total Info |
JAM 2023 Total Info | M TECH 2023 Total Info | RAILWAY 2022 Total Info |
Related Posts
- Semiconductor Materials » Exercise - 4 151. The addition of a very small quantity of aluminium to a silicon or germanium crystal makes it : (a) A good conductor (b) A good insulator (c) P-type semiconductor (d) N-type semiconductor 152. An intrinsic semiconductor at the absolute zero of temperature : (a) Behaves like a semiconductor (b) Behaves like an insulator (c) Has a few free electrons and same number of holes (d) Has a large number of holes and a few electrons 153. In a substance the conduction band and valence band are separated by a energy gap of the order of 1 eV, and there are at room temperature as money electrons in the conduction band as holes in the valence band. The substance is : (a) An intrinsic semiconductor (b) A p-type semiconductor (c) A N-type semiconductor (d) A doped semiconductor 154. The majority carriers of electricity in a p-type semiconductor are : (a) Free electrons (b) Holes (c) Both electrons and holes (d) Free ions 155. N-type semiconductor is obtained when silicon or germanium is doped by : (a) Phosphorus (b) Boron (c) Aluminium (d) Gallium 156. A p-type semiconductor is : 1. A silicon crystal doped with arsenic impurity. 2. A silicon crystal…
- Special Diodes » Exercise - 1 1. A Zener diode : (a) Is a battery under forward biased condition (b) Acts like battery when it breakdowns (c) Is a switch (d) Is a device having barrier potential more than 5V 2. At 25ºC, a Zener diode rates at 2 watts, its power rating at 50ºC will be : (a) Zero watts (b) Less than 1 watt (c) Greater than 2 watts (d) Less than 2 watts 3. Silicon is appreciably employed as a base material compared to germanium while manufacturing Zener diode since : (a) silicon is abundantly available (b) it is costlier (c) it has low current capability (d) it has high temperature capability 4. The capacitance of a varactor diode increases, when the reverse voltage across it is : (a) Decreased (b) Increased (c) Kept constant (d) None of the above 5. The main advantage of a point contact diode is that : (a) The ratio of forward current to reverse current is very high (b) Low input impedance (c) Its cut-in voltage is equal to zero (d) Its reverse resistance is infinite 6. Which one of the following is a Square law device ? (a) Zener diode (b) Crystal diode (c) Tunnel diode (d) Varactor diode 7. Match the given lists. List I…