5555555555
3. Ionization within a P-N junction causes a layer on each side of the barrier called the:
(a) junction
(b) depletion region
(c) barrier voltage
(d) forward voltage
| Subject Name : Electronics Engineering |
| Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT |
| Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant |
| Electronics & Communication Engineering Books
|
| GATE 2023 Total Info | ENGG DIPLOMA | UGC NET Total Info |
| IES 2023 Total Info | PSUs 2022 Total Info | CSIR UGC NET Total Info |
| JAM 2023 Total Info | M TECH 2023 Total Info | RAILWAY 2022 Total Info |
Related Posts
555555555510. What is the voltage across R1 if the P-N junction is made of silicon? (a) 12 V (b) 11.7 V (c) 11.3 V (d) 0 V- 5555555555110. The forward voltage across a conducting silicon diode is about (a) 0.3 V. (b) 1.7 V. (c) –0.7 V. (d) 0.7 V.
- 555555555523. A P-N junction mimics a closed switch when it: (a) has a low junction resistance (b) is reverse biased (c) cannot overcome its barrier voltage (d) has a wide depletion region
- 55555555558. When is a P-N junction formed? (a) in a depletion region (b) in a large reverse biased region (c) the point at which two opposite doped materials come together (d) whenever there is a forward voltage drop
- 55555555554. What causes the depletion region? (a) doping (b) diffusion (c) barrier potential (d) ions