5555555555
114. Doping of a semiconductor material means
(a) that a glue-type substance is added to hold the material together.
(b) that impurities are added to increase the resistance of the material.
(c) that impurities are added to decrease the resistance of the material.
(d) that all impurities are removed to get pure silicon.
| Subject Name : Electronics Engineering |
| Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT |
| Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant |
| Electronics & Communication Engineering Books
|
| GATE 2023 Total Info | ENGG DIPLOMA | UGC NET Total Info |
| IES 2023 Total Info | PSUs 2022 Total Info | CSIR UGC NET Total Info |
| JAM 2023 Total Info | M TECH 2023 Total Info | RAILWAY 2022 Total Info |
Related Posts
555555555524. What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities? (a) conductivity (b) resistance (c) power (d) all of the above- 555555555512. Which semiconductor material is made from coal ash? (a) germanium (b) silicon (c) tin (d) carbon
- 555555555515. How many valence electrons are in every semiconductor material? (a) 1 (b) 2 (c) 3 (d) 4
- 55555555552. Intrinsic semiconductor material is characterized by a valence shell of how many electrons? (a) 1 (b) 2 (c) 4 (d) 6
- 55555555556. What is a type of doping material? (a) extrinsic semiconductor material (b) pentavalent material (c) n-type semiconductor (d) majority carriers