Power Semiconductor Devices » Exercise - 1 25. The device that exhibits negative resistance region is ........................ (a) diac (b) triac (c) transistor (d) UJT
Power Semiconductor Devices » Exercise - 1 27. A diac is simply ........................ (a) a single junction device (b) a three junction device (c) a triac without gate terminal (d) none of the above
Power Semiconductor Devices » Exercise - 1 16. When the emitter terminal of a UJT is open, the resistance between the base terminals is generally ............ (a) high (b) low (c) extremely low (d) none of the above
Power Semiconductor Devices » Exercise - 1 28. After peak point, the UJT operates in the ........................ region. (a) cut-off (b) saturation (c) negative resistance (d) none of the above