16. When the emitter terminal of a UJT is open, the resistance between the base terminals is generally …………
(a) high
(b) low
(c) extremely low
(d) none of the above
17. When a UJT is turned ON, the resistance between emitter terminal and lower base terminal ……………….
(a) remains the same
(b) is decreased
(c) is increased
(d) none of the above
18. To turn on UJT, the forward bias on the emitter diode should be ………… the peak point voltage.
(a) less than
(b) equal to
(c) more than
(d) none of the above
19. A UJT is sometimes called ………… diode.
(a) low resistance
(b) high resistance
(c) single-base
(d) double-based
20. When the temperature increases, the inter-base resistance (RBB) of a UJT …………
(a) increases
(b) decreases
(c) remains the same
(d) none of the above
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- Power Semiconductor Devices » Exercise - 1 27. A diac is simply ........................ (a) a single junction device (b) a three junction device (c) a triac without gate terminal (d) none of the above
- Power Semiconductor Devices » Exercise - 1 16. When the emitter terminal of a UJT is open, the resistance between the base terminals is generally ............ (a) high (b) low (c) extremely low (d) none of the above
- Power Semiconductor Devices » Exercise - 1 28. After peak point, the UJT operates in the ........................ region. (a) cut-off (b) saturation (c) negative resistance (d) none of the above