Power Semiconductor Devices – 18

Power Semiconductor Devices » Exercise – 1

18. To turn on UJT, the forward bias on the emitter diode should be ………… the peak point voltage.

(a) less than
(b) equal to
(c) more than
(d) none of the above

Answer : (c)

Explanation : No answer description available for this question. Let us discuss.
Subject Name : Electronics Engineering
Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant
Electronics & Communication Engineering Books

Question Bank On Electronics & Communication Engineering
Book - question bank on electronics & communication engineering; Language: english; Binding: paperback
₹ 309
A Handbook for Electronics Engineering(Old Edition)
Made Easy Editorial Board (Author); Marathi (Publication Language); 620 Pages - 01/01/2015 (Publication Date) - Made Easy Publications (Publisher)
₹ 195
Basic Electronic Devices and Circuits
Patil (Author); English (Publication Language)
₹ 242
Electronic Circuits: Analysis and Design (SIE) | 3rd Edition
Neamen, Donald (Author); English (Publication Language); 1351 Pages - 08/25/2006 (Publication Date) - McGraw Hill Education (Publisher)
₹ 400

GATE 2022 Total InfoENGG DIPLOMAUGC NET Total Info
IES 2022 Total InfoPSUs 2021 Total InfoCSIR UGC NET Total Info
JAM 2022 Total InfoM TECH 2021 Total InfoRAILWAY 2021 Total Info

Related Posts

  • Power Semiconductor Devices – 23Power Semiconductor Devices » Exercise - 1 23. Between the peak point and the valley point of UJT emitter characteristics we have ............ region. (a) saturation (b) negative resistance (c) cut-off (d) none of the above
    Tags: power, semiconductor, devices, point, exercise, peak, ujt, emitter, electronics, engineering
  • Special Diodes - Exercise - 1Special Diodes » Exercise - 1 1. A Zener diode : (a)  Is a battery under forward biased condition (b)  Acts like battery when it breakdowns (c)  Is a switch (d)  Is a device having barrier potential more than 5V 2. At 25ºC, a Zener diode rates at 2 watts, its power rating at 50ºC will be : (a)  Zero watts (b)  Less than 1 watt (c)  Greater than 2 watts (d)  Less than 2 watts 3. Silicon is appreciably employed as a base material compared to germanium while manufacturing Zener diode since : (a)  silicon is abundantly available (b)  it is costlier (c)  it has low current capability (d)  it has high temperature capability 4. The capacitance of a varactor diode increases, when the reverse voltage across it is : (a) Decreased (b) Increased (c) Kept constant (d) None of the above 5. The main advantage of a point contact diode is that : (a) The ratio of forward current to reverse current is very high (b) Low input impedance (c) Its cut-in voltage is equal to zero (d) Its reverse resistance is infinite 6. Which one of the following is a Square law device ? (a) Zener diode (b) Crystal diode (c) Tunnel diode (d) Varactor diode 7. Match the given lists. List I…
    Tags: diode, electronics, engineering
  • Power Semiconductor Devices – 6Power Semiconductor Devices » Exercise - 1 6. A diac has ............ terminals. (a) two (b) three (c) four (d) none of the above
    Tags: power, semiconductor, devices, exercise, electronics, engineering
  • Power Semiconductor Devices – 7Power Semiconductor Devices » Exercise - 1 7. A triac has ............ semiconductor layers. (a) two (b) three (c) four (d) five
    Tags: semiconductor, power, devices, exercise, electronics, engineering
  • Power Semiconductor Devices – 8Power Semiconductor Devices » Exercise - 1 8. A diac has ............ pn junctions. (a) four (b) two (c) three (d) none of the above
    Tags: power, semiconductor, devices, exercise, electronics, engineering


Please enter your comment!
Please enter your name here