# PN Junction Diode – 4

4. The dynamic resistance of diode is :

(a) constant and independent of operating voltage
(b) constant and dependent on operating voltage
(c) not a constant and independent of operating voltage
(d) not a constant and dependent on operating voltage

Explanation
Explanation : No answer description available for this question. Let us discuss.

 Subject Name : Electronics Engineering Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant
 Electronics & Communication Engineering Books Sale Question Bank On Electronics & Communication Engineering Book - question bank on electronics & communication engineering; Language: english; Binding: paperback ₹ 316 Sale A Handbook for Electronics Engineering(Old Edition) Made Easy Editorial Board (Author); Marathi (Publication Language); 620 Pages - 01/01/2015 (Publication Date) - Made Easy Publications (Publisher) ₹ 320 Basic Electronic Devices and Circuits Patil (Author); English (Publication Language) Electronic Circuits: Analysis and Design (SIE) | 3rd Edition Neamen, Donald (Author); English (Publication Language); 1351 Pages - 08/25/2006 (Publication Date) - McGraw Hill Education (Publisher) ₹ 1,260

## Related Posts

• PN Junction Diode » Exercise - 130. The dynamic resistance of diode is : (a) Constant and independent of operating voltage (b) Constant and dependent on operating voltage (c) Not a constant and independent of operating voltage (d) Not a constant and dependent on operating voltage
Tags: operating, constant, voltage, diode, pn, junction, independent, dependent, exercise, dynamic
• PN Junction Diode » Exercise - 131. The dynamic resistance r of a diode varies as : (a) 1/I (b) 1/I2 (c) I (d) I2
Tags: diode, pn, junction, exercise, dynamic, resistance, electronics, engineering
• PN Junction Diode » Exercise - 12. The knee voltage of a PN junction diode is approximately equal to the : (a) Forward voltage (b) Applied voltage (c) Breakdown voltage (d) Potential
Tags: voltage, pn, junction, diode, exercise, electronics, engineering
• PN Junction Diode » Exercise - 138. The forward voltage drop across a silicon diode is about ............. (a) 2.5 V (b) 3 V (c) 10 V (d) 0.7 V
Tags: diode, pn, junction, exercise, voltage, electronics, engineering
• Special Diodes » Exercise - 1 1. A Zener diode : (a)  Is a battery under forward biased condition (b)  Acts like battery when it breakdowns (c)  Is a switch (d)  Is a device having barrier potential more than 5V 2. At 25ºC, a Zener diode rates at 2 watts, its power rating at 50ºC will be : (a)  Zero watts (b)  Less than 1 watt (c)  Greater than 2 watts (d)  Less than 2 watts 3. Silicon is appreciably employed as a base material compared to germanium while manufacturing Zener diode since : (a)  silicon is abundantly available (b)  it is costlier (c)  it has low current capability (d)  it has high temperature capability 4. The capacitance of a varactor diode increases, when the reverse voltage across it is : (a) Decreased (b) Increased (c) Kept constant (d) None of the above 5. The main advantage of a point contact diode is that : (a) The ratio of forward current to reverse current is very high (b) Low input impedance (c) Its cut-in voltage is equal to zero (d) Its reverse resistance is infinite 6. Which one of the following is a Square law device ? (a) Zener diode (b) Crystal diode (c) Tunnel diode (d) Varactor diode 7. Match the given lists. List I…
Tags: diode, electronics, engineering