“What is the difference between igbt and mosfet ?
What is the full form of igbt ?
What is the full form of mosfet ?
You all must have this kind of questions in your mind. 
Below article will solve this puzzle of yours. Just take a look.” 

 MOSFET vs IGBT  – Here we are going to define difference between MOSFET and IGBT.

What is a MOSFET ?

1. MOSFET full form is “Metal Oxide Semiconductor Field Effect Transistor”.
2. There are two types of MOSFET i.e., n-channel MOSFET and p-channel MOSFET. It can also be classified as Depletion MOSFET and Enhancement MOSFET.

What is a IGBT ?

1. IGBT full form is “Insulated Gate Bipolar Transistor”.
2. There are two types of IGBT i.e., NPT-IGBT (i.e. non punch through) and PT-IGBT (i.e. punch through).


1. MOSFET stands for “Metal Oxide Semiconductor Field Effect Transistor”. IGBT stands for “Insulated Gate Bipolar Transistor”.
2. MOSFET Terminals are gate, source and drain. IGBT Terminals are emitter, collector and gate.
3. MOSFET gate/control signal occurs between the gate and source, and its switch terminals are the drain and source. IGBT gate/control signal takes place between the gate and emitter, and its switch terminals are the drain and emitter.
4. MOSFET has High Switching Frequency (> 100kHz) IGBT has Low Switching Frequency (<20kHz)
5. MOSFET has low power handling (<250W). IGBTs has high power handling (> 250W).
6. Low-voltage, low-current and high switching frequencies favour MOSFETs. High-voltage, high-current and low switching frequencies, on the other hand, favour IGBTs.
7. MOSFET used in SMPS (Hard switching greater than 200 KHz). IGBT used in UPS (constant load, typically at low frequency).

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