6. BURST refresh in DRAM is also called as :
(a) Concentrated Refresh
(b) Distributed Refresh
(c) Hidden Refresh
(d) None
7. For the most static RAM, the maximum access time is about :
(a) 1 ns
(b) 10 ns
(c) 100 ns
(d) 1 µs
8. For the most static RAM, the write pulse width should be at least :
(a) 10 ns
(b) 60 ns
(c) 300 ns
(d) 1 µs
9. Access time is faster for :
(a) ROM
(b) SRAM
(c) DRAM
(d) EPROM
10. ROM stands for :
(a) Reading/writing
(b) Writing
(c) Reading
(d) All the above
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555555555573. The difference between RAM and ROM is that ________. (a) RAM has a read/write signal and ROM doesn't (b) RAM will lose data when the power is removed and ROM won't (c) RAM has random address access and ROM uses sequential address access (d) RAM has a read/write signal and ROM doesn't; RAM will lose data when the power is removed and ROM won't.[E]. All of the above
5555555555160. The address space of a RAM memory can be expanded using a decoder and additional memory ICs. The output of the decoder should be connected to which input line of the memory? (a) The most significant address inputs (b) The most significant data inputs (c) The read/write line (d) The chip enable