12. In IC fabrication, gettering is a process by which :
(a)The silicon wafer is highly polished (b)The silicon wafer is pre-heated to an optimum temperature for diffusion (c)The harmful impurities or defects are removed from the region in a wafer where devices are to be fabricated (d)Wafers are sliced into thin films
Answer
Answer : (c)
Explanation
Explanation : No answer description available for this question. Let us discuss.
(a)High optical reflection and absorption coefficient (b)Good conducting property due to the presence of free electrons (c)Opaque to all electromagnetic radiations from low frequency to the middle ultraviolet (d)All of these
Answer
Answer : (d)
Explanation
Explanation : No answer description available for this question. Let us discuss.
Basics of ICs » Exercise - 116. The substrate for IC fabrication is : (a) P type with typical thickness 200 μm (b) P type with typical thickness 50 μm (c) N type with typical thickness 200 μm (d) N type with typical thickness 50 μm
Basics of ICs » Exercise - 1 1. The substrate for IC fabrication is : (a) p type with typical thickness 200 μm (b) p type with typical thickness 50 μm (c) n type with typical thickness 200 μm (d) n type with typical thickness 50 μm
Basics of ICs » Exercise - 12. The active components of the IC’s are formed in : (a) the substrate (b) SiO2 layer (c) epitaxial layer (d) none of these
Basics of ICs » Exercise - 13. In IC fabrication, metallization means : (a) depositing SiO2 layer (b) covering with metallic cap (c) forming interconnection conduction pattern (d) all of the above
Basics of ICs » Exercise - 17. In IC fabrication, metallization means : (a) Depositing SiO2 layer (b) Covering with metallic cap (c) Forming interconnection conduction pattern (d) All of the above