Basics of ICs – Exercise – 1

1. The substrate for IC fabrication is :

(a)  p type with typical thickness 200 μm
(b)  p type with typical thickness 50 μm
(c)  n type with typical thickness 200 μm
(d)  n type with typical thickness 50 μm

Answer
Answer : (a)
Explanation
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2. The active components of the IC’s are formed in :

(a)  the substrate
(b)  SiO2 layer
(c)  epitaxial layer
(d)  none of these

Answer
Answer : (c)
Explanation
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3. In IC fabrication, metallization means :

(a)  depositing SiO2 layer
(b)  covering with metallic cap
(c)  forming interconnection conduction pattern
(d)  all of the above

Answer
Answer : (b)
Explanation
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4. In a single chip computer, CMOS circuits are used because of :

(a)  low lower dissipation
(b)  large packing density
(c)  high noise immunity
(d)  economicity

Answer
Answer : (b)
Explanation
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5. The voltage gain of basic CMOS is approximately :

(a)  (gmro)/2
(b)  2gmro
(c)  1/(2gmro)
(d)  2gm/ro

Answer
Answer : (a)
Explanation
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6. During IC fabrication, the chemical reaction involved in epitaxial growth takes place at a temperature of about :

(a)  500 °C
(b)  1000 °C
(c)  1200 °C
(d)  1500 °C

Answer
Answer : (c)
Explanation
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7. In IC fabrication, metallization means :

(a)  Depositing SiO2 layer
(b)  Covering with metallic cap
(c)  Forming interconnection conduction pattern
(d)  All of the above

Answer
Answer : (b)
Explanation
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8. The active components of the IC’s are formed in :

(a)  The substrate
(b)  SiO2layer
(c)  Epitaxial layer
(d)  None of these

Answer
Answer : (c)
Explanation
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9. The function of SiO2 layer in IC fabrication is :

(a)  Oxide masking
(b)  Oxide passivation
(c)  Oxide purification
(d)  Both a & b

Answer
Answer : (d)
Explanation
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10. Which is the final step in wafer processing sequence ?

(a)  Photolithography
(b)  Chemical vapour
(c)  Metallization
(d)  Oxidation

Answer
Answer : (c)
Explanation
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(a) (b) (c) (d) Answer : () [/su_spoiler]
Explanation
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12. In IC fabrication, gettering is a process by which :

(a)  The silicon wafer is highly polished
(b)  The silicon wafer is pre-heated to an optimum temperature for diffusion
(c)  The harmful impurities or defects are removed from the region in a wafer where devices are to be fabricated
(d)  Wafers are sliced into thin films

Answer
Answer : (c)
Explanation
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13. The law, which governs the diffusion process during the IC fabrication, is :

(a)  Flicker’s law
(b)  Flick law
(c)  Fick law
(d)  Fickler’s law

Answer
Answer : (c)
Explanation
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14. The most common diffusant used in interstitial diffusion in IC fabrication is :

(a)  Boron
(b)  Arsenic
(c)  Nickel
(d)  Gold

Answer
Answer : (d)
Explanation
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15. Metallic crystal possesses :

(a)  High optical reflection and absorption coefficient
(b)  Good conducting property due to the presence of free electrons
(c)  Opaque to all electromagnetic radiations from low frequency to the middle ultraviolet
(d)  All of these

Answer
Answer : (d)
Explanation
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16. The substrate for IC fabrication is :

(a)  P type with typical thickness 200 μm
(b)  P type with typical thickness 50 μm
(c)  N type with typical thickness 200 μm
(d)  N type with typical thickness 50 μm

Answer
Answer : (a)
Explanation
No answer description available for this question. Let us discuss.
17. Ultraviolet radiation is used in IC fabrication for :

(a)  Diffusion
(b)  Masking
(c)  Isolation
(d)  Metallization

Answer
Answer : (a)
Explanation
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18. Epitaxial growth is best suited for :

(a)  Growing polycrystalline pure silicon
(b)  Growing crystal of several inch thickness
(c)  Very thick single crystal on a substrate
(d)  Very thin single crystal on a substrate

Answer
Answer : (d)
Explanation
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19. At room temperature intrinsic carrier concentration is higher in germanium than in silicon due to :

(a)  Larger atomic number
(b)  Greater atomic weight
(c)  High carrier mobility
(d)  Smaller energy gap

Answer
Answer : (d)
Explanation
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20. An IC has …………….. size.

(a)  very large
(b)  large
(c)  extremely small
(d)  none of the above

Answer
Answer : (c)
Explanation
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21. ICs are generally made of ……………..

(a)  silicon
(b)  germanium
(c)  copper
(d)  none of the above

Answer
Answer : (a)
Explanation
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22. ………….. ICs are the most commonly used.

(a)  thin film
(b)  monolithic
(c)  hybrid
(d)  none of the above

Answer
Answer : (b)
Explanation
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23. The most popular form of IC package is ……………..

(a)  DIL
(b)  flatpack
(c)  TO-5
(d)  none of the above

Answer
Answer : (b)
Explanation
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24. ……………. cannot be fabricated on an IC.

(a)  transistors
(b)  diodes
(c)  resistors
(d)  large inductors and transformers

Answer
Answer : (d)
Explanation
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25. An audio amplifier is an example of …………..

(a)  digital IC
(b)  linear IC
(c)  both digitial and linear IC
(d)  none of the above

Answer
Answer : (b)
Explanation
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26. The active components in an IC are ………….

(a)  resistors
(b)  capacitors
(c)  transistors and diodes
(d)  none of the above

Answer
Answer : (c)
Explanation
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27. We use …………….. ICs in computers.

(a)  digital
(b)  linear
(c)  both digital and linear
(d)  none of the above

Answer
Answer : (a)
Explanation
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28. The SiO2 layer in an IC acts as ……………..

(a)  a resistor
(b)  an insulating layer
(c)  mechanical output
(d)  none of the above

Answer
Answer : (b)
Explanation
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29. ICs are used in ……………..

(a)  linear devices only
(b)  digital devices only
(c)  both linear and digital devices
(d)  none of the above

Answer
Answer : (c)
Explanation
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30. A transistor takes …………….. inductor on a silicon IC chip.

(a)  less space than
(b)  more space than
(c)  same space as
(d)  none of the above

Answer
Answer : (a)
Explanation
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31. The most popular types of ICs are ……………..

(a)  thin-film
(b)  hybrid
(c)  thick-film
(d)  monolithic

Answer
Answer : (c)
Explanation
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32. Digital ICs process ……………..

(a)  linear signals only
(b)  digital signals only
(c)  both digital and linear signals
(d)  none of the above

Answer
Answer : (c)
Explanation
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33. Operational amplifiers use ……………..

(a)  linear ICs
(b)  digital ICs
(c)  both linear and digital ICs
(d)  none of the above

Answer
Answer : (b)
Explanation
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34. Which of the following is most difficult to fabricate in an IC ?

(a)  diode
(b)  transistor
(c)  FET
(d)  capacitor

Answer
Answer : (d)
Explanation
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35. Large scale integration chips have between :

(a)  Less than 10 components
(b)  10 and 100 components
(c)  100 and 1000 components
(d)  More than 1000 components

Answer
Answer : (c)
Explanation
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