Semiconductor Materials – 68

68. Drift current in germanium is caused by :

(a) Concentration gradient of charge carriers
(b) Thermal agitation of crystal lattice
(c) Incidence of light energy
(d) Applied electric field

Answer : (d)

Explanation : No answer description available for this question. Let us discuss.

Topic Name : Semiconductor Materials
Subtopic Name : Electrical & Electronic Materials & Components
Subject Name : Electronics Engineering
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