Semiconductor Materials » Exercise – 2
65. Donor type impurities.
i : Have five valence electrons.
ii : Create excess free electrons.
iii : Are used to make n-type semiconductors.
iv : Have three valence electrons.
Of these statements
(a) i and iv are correct
(b) i, ii and iii are correct
(c) ii, iii and iv are correct
(d) iii and iv are correct
Subject Name : Electronics Engineering Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT
Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant
Electronics & Communication Engineering Books
GATE 2023 Total Info ENGG DIPLOMA UGC NET Total Info IES 2023 Total Info PSUs 2022 Total Info CSIR UGC NET Total Info JAM 2023 Total Info M TECH 2023 Total Info RAILWAY 2022 Total Info
Related Posts
Semiconductor Materials » Exercise - 3114. Resistivity of a semiconductor depends upon : (i) Atomic structure of the semiconductor. (ii) Shape of the semiconductor. (iii) Length of the semiconductor. Of these statements (a) (i) is correct (b) (ii) is correct (c) (iii) is correct (d) (i) and (iii) are correct- Semiconductor Materials » Exercise - 3128. A trivalent impurity has ........ valence electrons. (a) 4 (b) 5 (c) 6 (d) 3
- Semiconductor Materials » Exercise - 3126. A pentavalent impurity has ........ valence electrons. (a) 3 (b) 5 (c) 4 (d) 6
- Semiconductor Materials » Exercise - 293. A semiconductor has generally ........ valence electrons. (a) 2 (b) 3 (c) 6 (d) 4
- Semiconductor Materials » Exercise - 269. In a given semiconductor, Fermi level E is proportional to (n = total number of free electrons per unit volume). (a) n (b) n1/2 (c) n2/3 (d) n4/3