21. Tunnel diode, with its negative resistance characteristics can be employed for :
(a) Current amplification
(b) Voltage amplification
(c) Power amplification
(d) All of the above
22. Match the following
P. SCR (I) Low current SCR without gate
Q. Triac (II) Low current SCR with gate
R. Schottky diode (III) Uni-directional
S. SCS (IV) Bi-directional
(a) P – IV, Q – III, R – I, S – II
(b) P – I, Q – II, R – III, S – IV
(c) P – III, Q – IV, R – I, S – II
(d) P -I, Q – IV, R – II, S – III
23. In a Zener diode :
(a) P & N regions are lightly doped
(b) The depletion region is wide
(c) P & N regions are heavily doped
(d) The junction field current is small
24. In tunnel diode, the impurity concentration is in the order of :
(a) 1 part in 10^10 parts
(b) 1 part in 10^6 parts
(c) 1 part in 10^9 parts
(d) 1 part in 10^3 parts
25. Which diode is otherwise known as ESAKI diode ?
(a) PIN diode
(b) Schottky barrier diode
(c) GUNN diode
(d) Tunnel diode
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