11. For fastest switching operation, it is preferable to use :
(a) P-N junction diode
(b) Vacuum diode
(c) Zener diode
(d) Schottky diode
12. Which of the following devices is suitable for very low power oscillator circuit only ?
(a) TRAPATT diode
(b) IMPATT diode
(c) Gunn diode
(d) Tunnel diode
13. The transferred-electron bulk effect occurs in :
(a) Germanium
(b) Gallium arsenide
(c) Silicon
(d) Metal-semiconductor junction
14. Schottky transistors are preferred over normal transistors in digital applications because of their :
(a) Higher propagation delay
(b) Higher power dissipation
(c) Lower propagation delay
(d) Lower power dissipation
15. When used as switch, a Schottky transistor switches between :
(a) Cut-off and active regions
(b) Cut-off and saturation regions
(c) Active and saturation regions
(d) Different operation points in the active region
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