106. A silicon diode is forward-biased. You measure the voltage to ground from the anode at ________, and the voltage from the cathode to ground at ________.
(a) 0 V, 0.3 V
(b) 2.3 V, 1.6 V
(c) 1.6 V, 2.3 V
(d) 0.3 V, 0 V
107. There is a small amount of current across the barrier of a reverse-biased diode. This current is called
(a) forward-bias current.
(b) reverse breakdown current.
(c) conventional current.
(d) reverse leakage current.
108. The boundary between p-type material and n-type material is called
(a) a diode.
(b) a reverse-biased diode.
(c) a pn junction.
(d) a forward-biased diode.
109. Reverse breakdown is a condition in which a diode
(a) is subjected to a large reverse voltage.
(b) is reverse-biased and there is a small leakage current.
(c) has no current flowing at all.
(d) is heated up by large amounts of current in the forward direction.
110. The forward voltage across a conducting silicon diode is about
(a) 0.3 V.
(b) 1.7 V.
(c) –0.7 V.
(d) 0.7 V.
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- Electronics Engineering » PN Junction Diode » Notes 1. When a semiconductor chip contains an N doped region adjacent to a P doped region, a diode junction(often called a PN junction) is formed. Figure-1 : PN Junction Diode 2. The impurities added to an N type region increases the number of electrons capable of conducting charge, while the impurities added to a P type region increase the number of holes that are capable of conducting charge. 3. In a diode, the P material is called the anode. The N material is called the cathode. Figure-2 : Anode & Cathode in PN Junction Diode 4. Diodes are useful because electric current will flow through a PN junction in one direction only. Figure-3 : Direction of Current in PN Junction Diode 5. When the diode is connected so that the current is flowing, it is said to be forward biased. In a forward biased diode, the anode is connected to a higher voltage than the cathode. Figure-4 : Forward Biased PN Junction Diode