Semiconductor Materials » Exercise – 1
46. Donor impurity atoms in a semiconductor results in the formation of new :
(a) Wide energy band
(b) Narrow energy band
(c) Discrete energy level just below conduction
(d) Discrete energy level just above conductionSubject Name : Electronics Engineering Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant Electronics & Communication Engineering Books
GATE 2023 Total Info ENGG DIPLOMA UGC NET Total Info IES 2023 Total Info PSUs 2022 Total Info CSIR UGC NET Total Info JAM 2023 Total Info M TECH 2023 Total Info RAILWAY 2022 Total Info
Related Posts
Atoms and Electrons » Exercise - 285. The forbidden energy band gap in conductors, semiconductor and insulators are EG1, EG2 and EG3 respectively then - (a) EG1> EG2>EG3 (b) EG1< EG2< EG3 (c) EG1> EG2 = EG3 (d) EG1 = EG2 = EG3- Semiconductor Materials » Exercise - 286. A semiconductor has ........ band. (a) almost empty valence (b) almost empty conduction (c) almost full conduction (d) none of the above
- Semiconductor Materials » Exercise - 2100. The impurity level in an extrinsic semiconductor is about ............. of pure semiconductor. (a) 10 atoms for 108 atoms (b) 1 atom for 108 atoms (c) 1 atom for 104 atoms (d) 1 atom for 100 atoms
- Semiconductor Materials » Exercise - 4175. The energy band gap of silicon is - (a) 0.72 eV (b) 1.1 eV (c) 6 eV (d) Between 0.72 eV to 1.1 eV
- Semiconductor Materials » Exercise - 115. Which of the following doesn’t have forbidden energy gap between valence band and conductor band ? (a) conductor (b) insulator (c) semiconductor (d) none of the above