Semiconductor Materials » Exercise – 4
174. In Intrinsic semi conductor the valence and conduction bands –
(a) Overlap with each other
(b) Are separated by an energy gap of about 1 eV
(c) Are separated by an energy gap of about 10 eV
(d) Are separated by an energy gap about 0.001 eVSubject Name : Electronics Engineering Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant Electronics & Communication Engineering Books
GATE 2023 Total Info ENGG DIPLOMA UGC NET Total Info IES 2023 Total Info PSUs 2022 Total Info CSIR UGC NET Total Info JAM 2023 Total Info M TECH 2023 Total Info RAILWAY 2022 Total Info
Related Posts
Semiconductor Materials » Exercise - 289. In a semiconductor, the energy gap between valence and conduction bands is about ........ (a) 15 eV (b) 100 eV (c) 50 eV (d) 1 eV- Semiconductor Materials » Exercise - 287. In a semiconductor, the energy gap between valence and conduction bands is about ........ (a) 15 eV (b) 100 eV (c) 50 eV (d) 1 eV
- Semiconductor Materials » Exercise - 3116. At 300ºK, the forbidden energy gap in germanium is : (a) 0.543 eV (b) 0.632 eV (c) 0.72 eV (d) 0.89 eV
- Semiconductor Materials » Exercise - 4175. The energy band gap of silicon is - (a) 0.72 eV (b) 1.1 eV (c) 6 eV (d) Between 0.72 eV to 1.1 eV
- Semiconductor Materials » Exercise - 278. At 300ºK, the forbidden energy gap in silicon is : (a) 0.78 eV (b) 1.21 eV (c) 0.72 eV (d) 1.10 eV