Semiconductor Materials » Exercise - 124. When a semiconductor is heavily doped in a range of 1017 to 1018 impurity atoms/cm3, then it behaves as : (a) Intrinsic semiconductor (b) Extrinsic semiconductor (c) Simply as semiconductor (d) Degenerative semiconductor
Semiconductor Materials » Exercise - 3144. With forward bias to a pn junction, the width of depletion layer ........ (a) decreases (b) increases (c) remains the same (d) none of the above
Semiconductor Materials » Exercise - 3142. The leakage current across a pn junction is due to ........ (a) minority carriers (b) majority carriers (c) junction capacitance (d) none of the above
Semiconductor Materials » Exercise - 3141. A reverse biased pn junction has resistance of the ........ (a) order of Ω (b) order of kΩ (c) order of MΩ (d) none of the above