Semiconductor Materials » Exercise – 3
134. The random motion of holes and free electrons due to thermal agitation is called ……..
(a) diffusion
(b) pressure
(c) ionisation
(d) none of the aboveSubject Name : Electronics Engineering Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant Electronics & Communication Engineering Books
GATE 2023 Total Info ENGG DIPLOMA UGC NET Total Info IES 2023 Total Info PSUs 2022 Total Info CSIR UGC NET Total Info JAM 2023 Total Info M TECH 2023 Total Info RAILWAY 2022 Total Info
Related Posts
Semiconductor Materials » Exercise - 3133. In a semiconductor, current conduction is due ........ (a) only to holes (b) only to free electrons (c) to holes and free electrons (d) none of the above- Semiconductor Materials » Exercise - 3147. At room temperature, an intrinsic semiconductor has ........ (a) many holes only (b) a few free electrons and holes (c) many free electrons only (d) no holes or free electrons
- Semiconductor Materials » Exercise - 3128. A trivalent impurity has ........ valence electrons. (a) 4 (b) 5 (c) 6 (d) 3
- Semiconductor Materials » Exercise - 3146. In an intrinsic semiconductor, the number of free electrons ........ (a) equals the number of holes (b) is greater than the number of holes (c) is less than the number of holes (d) none of the above
- Semiconductor Materials » Exercise - 3129. Addition of trivalent impurity to a semiconductor creates many ........ (a) holes (b) free electrons (c) valence electrons (d) bound electrons