Semiconductor Materials » Exercise – 3
128. A trivalent impurity has …….. valence electrons.
(a) 4
(b) 5
(c) 6
(d) 3Subject Name : Electronics Engineering Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant Electronics & Communication Engineering Books
GATE 2023 Total Info ENGG DIPLOMA UGC NET Total Info IES 2023 Total Info PSUs 2022 Total Info CSIR UGC NET Total Info JAM 2023 Total Info M TECH 2023 Total Info RAILWAY 2022 Total Info
Related Posts
Semiconductor Materials » Exercise - 3126. A pentavalent impurity has ........ valence electrons. (a) 3 (b) 5 (c) 4 (d) 6- Semiconductor Materials » Exercise - 293. A semiconductor has generally ........ valence electrons. (a) 2 (b) 3 (c) 6 (d) 4
- Semiconductor Materials » Exercise - 3129. Addition of trivalent impurity to a semiconductor creates many ........ (a) holes (b) free electrons (c) valence electrons (d) bound electrons
- Semiconductor Materials » Exercise - 277. In P-type semiconductor : (a) n=p (b) p (c) n (d) p>>n
- Semiconductor Materials » Exercise - 124. When a semiconductor is heavily doped in a range of 1017 to 1018 impurity atoms/cm3, then it behaves as : (a) Intrinsic semiconductor (b) Extrinsic semiconductor (c) Simply as semiconductor (d) Degenerative semiconductor