Power Semiconductor Devices » Exercise – 1
8. A diac has ………… pn junctions.
(a) four
(b) two
(c) three
(d) none of the above
| Subject Name : Electronics Engineering |
| Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT |
| Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant |
| Electronics & Communication Engineering Books |
| GATE 2023 Total Info | ENGG DIPLOMA | UGC NET Total Info |
| IES 2023 Total Info | PSUs 2022 Total Info | CSIR UGC NET Total Info |
| JAM 2023 Total Info | M TECH 2023 Total Info | RAILWAY 2022 Total Info |
Related Posts
Power Semiconductor Devices » Exercise - 1 7. A triac has ............ semiconductor layers. (a) two (b) three (c) four (d) five- Power Semiconductor Devices » Exercise - 1 10. A diac has ............ semiconductor layers. (a) three (b) two (c) four (d) none of the above
- Power Semiconductor Devices » Exercise - 1 6. A diac has ............ terminals. (a) two (b) three (c) four (d) none of the above
- Power Semiconductor Devices » Exercise - 1 11. A UJT has ........................ (a) two pnjunctions (b) one pnjunction (c) three pnjunctions (d) none of the above
- Power Amplifiers » Exercise - 1 (a) (b) (c) (d) (a) (b) (c) (d) (a) (b) (c) (d) (a) (b) (c) (d) (a) (b) (c) (d)