Power Semiconductor Devices » Exercise – 1
4. The V-I characteristics for a triac in the first and third quadrants are essentially identical
to those of ………… in the first quadrant.
(a) transistor
(b) SCR
(c) UJT
(d) none of the above
| Subject Name : Electronics Engineering |
| Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT |
| Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant |
| Electronics & Communication Engineering Books |
| GATE 2023 Total Info | ENGG DIPLOMA | UGC NET Total Info |
| IES 2023 Total Info | PSUs 2022 Total Info | CSIR UGC NET Total Info |
| JAM 2023 Total Info | M TECH 2023 Total Info | RAILWAY 2022 Total Info |
Related Posts
Power Semiconductor Devices » Exercise - 1 2. A triac is equivalent to two SCRs ............ (a) in parallel (b) in series (c) in inverse-parallel (d) none of the above- Power Semiconductor Devices » Exercise - 1 3. A triac is a ............ switch. (a) bidirectional (b) undirectional (c) mechanical (d) none of the above
- Power Semiconductor Devices » Exercise - 1 6. A diac has ............ terminals. (a) two (b) three (c) four (d) none of the above
- Power Semiconductor Devices » Exercise - 1 7. A triac has ............ semiconductor layers. (a) two (b) three (c) four (d) five
- Power Semiconductor Devices » Exercise - 1 8. A diac has ............ pn junctions. (a) four (b) two (c) three (d) none of the above