Power Semiconductor Devices » Exercise - 1 23. Between the peak point and the valley point of UJT emitter characteristics we have ............ region. (a) saturation (b) negative resistance (c) cut-off (d) none of the above
Power Semiconductor Devices » Exercise - 1 25. The device that exhibits negative resistance region is ........................ (a) diac (b) triac (c) transistor (d) UJT
Power Semiconductor Devices » Exercise - 1 20. When the temperature increases, the inter-base resistance (RBB) of a UJT ............ (a) increases (b) decreases (c) remains the same (d) none of the above