Power Semiconductor Devices – 25

25. The device that exhibits negative resistance region is ……………………

(a) diac
(b) triac
(c) transistor
(d) UJT

Answer

Answer : (d)

Explanation

Explanation : No answer description available for this question. Let us discuss.

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Power Semiconductor Devices – 7
Power Semiconductor Devices » Exercise - 1 7. A triac has ............ semiconductor layers. (a) two (b) three (c) four (d) five
Tags: semiconductor, power, devices, exercise, triac, electronics, engineering
Power Semiconductor Devices – 10
Power Semiconductor Devices » Exercise - 1 10. A diac has ............ semiconductor layers. (a) three (b) two (c) four (d) none of the above
Tags: semiconductor, power, devices, exercise, diac, electronics, engineering
Power Semiconductor Devices – 28
Power Semiconductor Devices » Exercise - 1 28. After peak point, the UJT operates in the ........................ region. (a) cut-off (b) saturation (c) negative resistance (d) none of the above
Tags: power, semiconductor, devices, exercise, ujt, region, negative, resistance, electronics, engineering
Power Semiconductor Devices – 9
Power Semiconductor Devices » Exercise - 1 9. The device that does not have the gate terminal is ............ (a) triac (b) FET (c) SCR (d) diac
Tags: power, semiconductor, devices, exercise, device, triac, diac, electronics, engineering
Power Semiconductor Devices – 6
Power Semiconductor Devices » Exercise - 1 6. A diac has ............ terminals. (a) two (b) three (c) four (d) none of the above
Tags: power, semiconductor, devices, exercise, diac, electronics, engineering

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