Power Semiconductor Devices – 21

21. The intrinsic stand off ratio (η) of a UJT is given by ……………..

(a) R_B1+R_B2
(b) (R_B1+R_B2)_{/R_B1}
(c) R_{B1/(R_B1+R_B2)}
(d) ( R_B1+R_B2)_{/R_B2}

Answer

Answer : (c)

Explanation

Explanation : No answer description available for this question. Let us discuss.

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PNPN Devices - 3
55555555553. Determine RB1 for a silicon PUT if it is determined that h = 0.84, VP = 11.2 V, and RB2 = 5 k. (a) 12.65 k (b) 16.25 k (c) 20.00 k (d) 26.25 k
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Power Semiconductor Devices – 10
Power Semiconductor Devices » Exercise - 1 10. A diac has ............ semiconductor layers. (a) three (b) two (c) four (d) none of the above
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Power Semiconductor Devices – 6
Power Semiconductor Devices » Exercise - 1 6. A diac has ............ terminals. (a) two (b) three (c) four (d) none of the above
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Power Semiconductor Devices – 7
Power Semiconductor Devices » Exercise - 1 7. A triac has ............ semiconductor layers. (a) two (b) three (c) four (d) five
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BJT Amplifiers - 3
55555555553. What is the most important r parameter for amplifier analysis? (a) rb′ (b) rc′ (c) (d)
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