Power Semiconductor Devices – 20

20. When the temperature increases, the inter-base resistance (R_BB) of a UJT …………

(a) increases
(b) decreases
(c) remains the same
(d) none of the above

Answer

Answer : (a)

Explanation

Explanation : No answer description available for this question. Let us discuss.

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Power Semiconductor Devices – 22
Power Semiconductor Devices » Exercise - 1 22. When the temperature increases, the intrinsic stand off ratio ................. (a) increases (b) decreases (c) essentially remains the same (d) none of the above
Tags: power, semiconductor, devices, increases, exercise, temperature, decreases, remains, electronics, engineering
Power Semiconductor Devices – 7
Power Semiconductor Devices » Exercise - 1 7. A triac has ............ semiconductor layers. (a) two (b) three (c) four (d) five
Tags: semiconductor, power, devices, exercise, electronics, engineering
Power Semiconductor Devices – 6
Power Semiconductor Devices » Exercise - 1 6. A diac has ............ terminals. (a) two (b) three (c) four (d) none of the above
Tags: power, semiconductor, devices, exercise, electronics, engineering
Power Semiconductor Devices – 8
Power Semiconductor Devices » Exercise - 1 8. A diac has ............ pn junctions. (a) four (b) two (c) three (d) none of the above
Tags: power, semiconductor, devices, exercise, electronics, engineering
Power Semiconductor Devices – 10
Power Semiconductor Devices » Exercise - 1 10. A diac has ............ semiconductor layers. (a) three (b) two (c) four (d) none of the above
Tags: semiconductor, power, devices, exercise, electronics, engineering

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