36. Boltzmann diode equation relates :
(a) Voltage and temperature characteristics of a junction
(b) Voltage and current characteristics of a junction
(c) Current and temperature characteristics of a junction
(d) Resistance and temperature characteristics of a junction
37. The reverse current in a diode is of the order of …………
(a) kA
(b) mA
(c) microA
(d) A
38. The forward voltage drop across a silicon diode is about ………….
(a) 2.5 V
(b) 3 V
(c) 10 V
(d) 0.7 V
39. The width of the depletion layer in a P-N junction diode :
(a) Increases when a forward bias is applied
(b) Decreases when a reverse bias is applied
(c) Remain the same, irrespective of the bias
(d) none of these
40. Depletion region in a diode is –
(a) Positivity charged
(b) Negatively charged
(c) Completely neutral and has no charge
(d) A charged region of positive and negative ions at the junction
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