41. A JFET is a ……. driven device.
(a) current
(b) voltage
(c) both current and voltage
(d) none of the above
42. The gate of a JFET is ……. biased.
(a) reverse
(b) forward
(c) reverse as well as forward
(d) none of the above
43. The input impedance of a JFET is ……. that of an ordinary transistor.
(a) equal to
(b) less than
(c) more than
(d) none of the above
44. In a p-channel JFET, the charge carriers are …….
(a) electrons
(b) holes
(c) both electrons and holes
(d) none of the above
45. A JFET……… is usually the point of reference.
(a) Gate
(b) Drain
(c) Source
(d) Either b or c
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FET » Exercise - 150. The input control parameter of a JFET is ....... (a) gate voltage (b) source voltage (c) drain voltage (d) gate current- FET » Exercise - 2 51. A common base configuration of a pnp transistor is analogous to ....... of a JFET. (a) common source configuration (b) common drain configuration (c) common gate configuration (d) none of the above 52. A JFET has high input impedance because ....... (a) it is made of semiconductor material (b) input is reverse biased (c) of impurity atoms (d) none of the above 53. In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layers ....... (a) almost touch each other (b) have large gap (c) have moderate gap (d) none of the above 54. In a JFET, IDSS is known as .............. (a) drain to source current (b) drain to source current with gate shorted (c) drain to source current with gate open (d) none of the above 55. The two important advantages of a JFET are .............. (a) high input impedance and square-law property (b) inexpensive and high output impedance (c) low input impedance and high output impedance (d) none of the above 56. .............. has the lowest noise-level. (a) triode (b) ordinary transistor (c) tetrode (d) JFET 57. A MOSFET is sometimes called ....... JFET. (a) many gate (b) open gate (c) insulated gate (d) shorted gate…
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