Basics of ICs – Exercise – 1

Basics of ICs » Exercise – 1

1. The substrate for IC fabrication is :

(a)  p type with typical thickness 200 μm
(b)  p type with typical thickness 50 μm
(c)  n type with typical thickness 200 μm
(d)  n type with typical thickness 50 μm

2. The active components of the IC’s are formed in :

(a) the substrate
(b)  SiO2 layer
(c)  epitaxial layer
(d)  none of these

3. In IC fabrication, metallization means :

(a)  depositing SiO2 layer
(b)  covering with metallic cap
(c)  forming interconnection conduction pattern
(d)  all of the above

4. In a single chip computer, CMOS circuits are used because of :

(a)  low lower dissipation
(b)  large packing density
(c)  high noise immunity
(d)  economicity

5. The voltage gain of basic CMOS is approximately :

(a)  (g_mr_o)/2
(b)  2g_mr_o
(c)  1/(2g_mr_o)
(d)  2g_m/r_o

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