PNPN Devices » Exercise – 1
1. Which of the following devices has a negative-resistance region in its characteristics curve?
(a) SCR
(b) SCS
(c) Unijunction transistor
(d) Phototransistor
2. Which of the following devices does not have a cathode terminal?
(a) SCR
(b) SCS
(c) Triac
(d) Shockley diode
3. Determine RB1 for a silicon PUT if it is determined that h = 0.83, VP = 11.2 V, and RB2 = 5 k.
(a) 12.65 k
(b) 16.25 k
(c) 20.00 k
(d) 26.25 k
4. In a half-wave variable-resistance phase control operation, the control cannot be extended past a ________ phase displacement.
(a) 44º
(b) 90º
(c) 134º
(d) 180º
5. The ________ are the terminals of an SCS.
(a) anode, anode gate, cathode gate, and cathode
(b) anode, cathode, cathode gate, and gate
(c) anode, anode gate, cathode, and gate
(d) anode, cathode, and gate
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