21. Localized hot spots and device destruction can take place in power transistors due to :
(a) Avalanche breakdown
(b) Primary breakdown
(c) Second breakdown
(d) Quasi-saturation breakdownSubject Name : Electronics Engineering Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant Electronics & Communication Engineering Books
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