171. The drift of a hole in a semiconductor is brought by –
(a)The vacancy being filled by a free electron (b)The vacancy being filled by an ion (c)The vacancy being filled by a valence electron from a neighbouring atom (d)The movement of an atom in the solid
Answer
Answer : (c)
Explanation
Explanation : No answer description available for this question. Let us discuss.
Semiconductor Materials » Exercise - 272. When a free electron is recaptured by a hole, the process is called : (a) Diffusion (b) Restoration (c) Recombination (d) Drift
Semiconductor Materials » Exercise - 4172. A substance has an electron concentration of 8 x 106 per m3 and a hole concentration of 2 x 1012 per m3. The substance is - (a) An intrinsic semiconductor (b) A n- type semiconductor (c) A p- type semiconductor (d) An insulator
Semiconductor Materials » Exercise - 3130. A hole in a semiconductor is defined as ........ (a) a free electron (b) the incomplete part of an electron pair bond (c) a free proton (d) a free neutron
Semiconductor Materials » Exercise - 144. At room temperature in intrinsic germanium, there is about : (a) One free electron for every 109atoms (b) One free electron for every 1010 atoms (c) One free electron for every 1012 atoms (d) One free electron for every 1015 atoms