Semiconductor Materials » Exercise – 2
68. Drift current in germanium is caused by :
(a) Concentration gradient of charge carriers
(b) Thermal agitation of crystal lattice
(c) Incidence of light energy
(d) Applied electric fieldSubject Name : Electronics Engineering Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant Electronics & Communication Engineering Books
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