Semiconductor Materials » Exercise - 135. Current flow in the semiconductor slap is due to : (a) Drift phenomenon (b) Diffusion phenomenon (c) Recombination phenomenon (d) All of the above
Semiconductor Materials » Exercise - 124. When a semiconductor is heavily doped in a range of 1017 to 1018 impurity atoms/cm3, then it behaves as : (a) Intrinsic semiconductor (b) Extrinsic semiconductor (c) Simply as semiconductor (d) Degenerative semiconductor
Semiconductor Materials » Exercise - 141. The forbidden energy gap Eg in a semiconductor is a function of : (a) Current (b) Voltage (c) Potential (d) Temperature