Semiconductor Materials » Exercise - 275. The diffusion constant for holes in germanium is found to be : (a) 13 cm2/s (b) 28 cm2/s (c) 32 cm2/s (d) 47 cm2/s
Semiconductor Materials » Exercise - 276. In semiconductor, the rate of diffusion of charge carriers depends on : (a) Concentration gradient (b) Mobility (c) Both (a) and (b) (d) Either (a) and (b)
Semiconductor Materials » Exercise - 4173. When the conductivity of semiconductor is only due to the breaking of the covalent bands, the semiconductor is - (a) An intrinsic semiconductor (b) A p- type semiconductor (c) A n- type semiconductor (d) an extrinsic semiconductor