Semiconductor Materials » Exercise - 12. Doping is a process of : (a) purifying semiconductor material (b) increasing impurity percentage (c) removal of foreign atoms (d) increasing the bias potential
Semiconductor Materials » Exercise - 124. When a semiconductor is heavily doped in a range of 1017 to 1018 impurity atoms/cm3, then it behaves as : (a) Intrinsic semiconductor (b) Extrinsic semiconductor (c) Simply as semiconductor (d) Degenerative semiconductor
Semiconductor Materials » Exercise - 3123. In germanium, medium doping corresponds to impurity of the order : (a) 1 part in 105 (b) 1 part in 104 (c) 1 part in 103 (d) 1 part in 102
555555555598. An n-type semiconductor material (a) is intrinsic. (b) has trivalent impurity atoms added. (c) has pentavalent impurity atoms added. (d) requires no doping.
Semiconductor Materials » Exercise - 3 101. The material whose Hall effect is found to be zero is : (a) Conductor (b) Insulator (c) Extrinsic semiconductor (d) Intrinsic semiconductor