19. Drift current in the semiconductors depends upon :
(a)only the electric field (b)only the carrier concentration gradient (c)both the electric field and the carrier concentration (d)both the electric field and the carrier concentration gradient
Answer
Answer : (c)
Explanation
Explanation : No answer description available for this question. Let us discuss.
Semiconductor Materials » Exercise - 124. When a semiconductor is heavily doped in a range of 1017 to 1018 impurity atoms/cm3, then it behaves as : (a) Intrinsic semiconductor (b) Extrinsic semiconductor (c) Simply as semiconductor (d) Degenerative semiconductor
Semiconductor Materials » Exercise - 268. Drift current in germanium is caused by : (a) Concentration gradient of charge carriers (b) Thermal agitation of crystal lattice (c) Incidence of light energy (d) Applied electric field
Semiconductor Materials » Exercise - 276. In semiconductor, the rate of diffusion of charge carriers depends on : (a) Concentration gradient (b) Mobility (c) Both (a) and (b) (d) Either (a) and (b)
Semiconductor Materials » Exercise - 290. A semiconductor is formed by ........ bonds. (a) covalent (b) electrovalent (c) co-ordinate (d) none of the above