Power Semiconductor Devices – 14

14. In a UJT,the p-type emitter is ………… doped.

(a) lightly
(b) heavily
(c) moderately
(d) none of the above

Answer

Answer : (b)

Explanation

Explanation : No answer description available for this question. Let us discuss.

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Power Semiconductor Devices – 6
Power Semiconductor Devices » Exercise - 1 6. A diac has ............ terminals. (a) two (b) three (c) four (d) none of the above
Tags: power, semiconductor, devices, exercise, electronics, engineering
Power Semiconductor Devices – 7
Power Semiconductor Devices » Exercise - 1 7. A triac has ............ semiconductor layers. (a) two (b) three (c) four (d) five
Tags: semiconductor, power, devices, exercise, electronics, engineering
Power Semiconductor Devices – 10
Power Semiconductor Devices » Exercise - 1 10. A diac has ............ semiconductor layers. (a) three (b) two (c) four (d) none of the above
Tags: semiconductor, power, devices, exercise, electronics, engineering
Power Semiconductor Devices – 24
Power Semiconductor Devices » Exercise - 1 24. A diac is turned on by ...................... (a) breakover voltage (b) gate voltage (c) gate current (d) none of the above
Tags: power, semiconductor, devices, exercise, electronics, engineering
Power Semiconductor Devices – 26
Power Semiconductor Devices » Exercise - 1 26. The UJT may be used as ........................ (a) an amplifier (b) a sawtooth generator (c) a rectifier (d) none of the above
Tags: power, semiconductor, devices, exercise, electronics, engineering

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