MOSFET – Exercise – 1

MOSFET » Exercise – 1

1. For a MOSFET, the gate current :

(a) Is dependent on drain current
(b) Is negligibly small
(c) Is independent of gate voltage
(d) Increases with increase in gate voltage

2. For an n-channel enhancement mode MOSFET, the drain current :

(a) Decreases with increases in drain voltage
(b) Decreases with decrease in drain voltage
(c) Increases with increases in gate voltage
(d) Increases with decrease in gate voltage

3. Input impedance of MOSFET is :

(a) Less than BJT but more than FET
(b) More than BJT but less than FET
(c) More than BJT and FET
(d) Less than BJT and FET

4. Electrostatic discharge may kill :

(a) BJT
(b) FET
(c) UJT
(d) MOSFET

5. Consider the statements
Statement I : N-channel MOS transistors are faster than p-channel MOS transistor.
Statement II : Surface field effect is the operational principle of MOSFETs.
Which of the above is/are a valid one ?

(a) Statement I only
(b) Statement II only
(c) Both statements I and II
(d) Either statement I or II

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